Infineon

Discrete Semiconductors

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  • TWD155.00
    /個 (每包:4個)
SPW21N50C3FKSA1 N-Channel MOSFET, 21 A, 560 V CoolMOS C3, 3-Pin TO-247 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current21 A
  • Maximum Drain Source Voltage560 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • TWD131.60
    毎管:30 個
SPW21N50C3FKSA1 N-Channel MOSFET, 21 A, 560 V CoolMOS C3, 3-Pin TO-247 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current21 A
  • Maximum Drain Source Voltage560 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • TWD57.90
    個 (在毎卷:800)
IRFS7530TRL7PP N-Channel MOSFET, 240 A, 60 V StrongIRFET, 7-Pin D2PAK Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current240 A
  • Maximum Drain Source Voltage60 V
  • Package TypeD2PAK (TO-263)
  • Mounting TypeSurface Mount
See similar products in MOSFETs
  • TWD10.20
    /個 (每包:10個)
Infineon BSP60H6327XTSA1 PNP Darlington Pair, 1 A 45 V HFE:1000, 3 + Tab-Pin SOT-223
  • Transistor TypePNP
  • Maximum Continuous Collector Current1 A
  • Maximum Collector Emitter Voltage45 V
  • Maximum Emitter Base Voltage5 V
  • Package TypeSOT-223
See similar products in Darlington Pairs
  • TWD9.30
    個 (在毎卷:1000)
Infineon BSP60H6327XTSA1 PNP Darlington Pair, 1 A 45 V HFE:1000, 3 + Tab-Pin SOT-223
  • Transistor TypePNP
  • Maximum Continuous Collector Current1 A
  • Maximum Collector Emitter Voltage45 V
  • Maximum Emitter Base Voltage5 V
  • Package TypeSOT-223
See similar products in Darlington Pairs
  • TWD3.30
    /個 (每包:100個)
2N7002H6327XTSA2 N-Channel MOSFET, 300 mA, 60 V OptiMOS, 3-Pin SOT-23 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current300 mA
  • Maximum Drain Source Voltage60 V
  • Package TypeSOT-23
  • Mounting TypeSurface Mount
See similar products in MOSFETs
  • TWD1.60
    個 (在毎卷:3000)
2N7002H6327XTSA2 N-Channel MOSFET, 300 mA, 60 V OptiMOS, 3-Pin SOT-23 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current300 mA
  • Maximum Drain Source Voltage60 V
  • Package TypeSOT-23
  • Mounting TypeSurface Mount
See similar products in MOSFETs
  • TWD4.30
    /個 (每包:100個)
Infineon ESD112B102ELE6327XTMA1, Bi-Directional TVS Diode, 2-Pin TSLP
  • Diode ConfigurationSingle
  • Direction TypeBi-Directional
  • Maximum Clamping Voltage44V
  • Minimum Breakdown Voltage7V
  • Mounting TypeSurface Mount
See similar products in TVS Diodes
  • TWD30.90
    毎管:50 個
IRF640NPBF N-Channel MOSFET, 18 A, 200 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current18 A
  • Maximum Drain Source Voltage200 V
  • Package TypeTO-220AB
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • TWD2.90
    個 (在毎卷:15000)
Infineon ESD112B102ELE6327XTMA1, Bi-Directional TVS Diode, 2-Pin TSLP
  • Direction TypeBi-Directional
  • Diode ConfigurationSingle
  • Maximum Clamping Voltage44V
  • Minimum Breakdown Voltage7V
  • Mounting TypeSurface Mount
See similar products in TVS Diodes
  • TWD90.30
    毎管:50 個
Infineon IRG4BC30UDPBF IGBT, 23 A 600 V, 3-Pin TO-220AB
  • Maximum Continuous Collector Current23 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Package TypeTO-220AB
  • Mounting TypeThrough Hole
See similar products in IGBTs
  • TWD36.00
IRF640NPBF N-Channel MOSFET, 18 A, 200 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current18 A
  • Maximum Drain Source Voltage200 V
  • Package TypeTO-220AB
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • TWD209.00
SPW20N60S5FKSA1 N-Channel MOSFET, 20 A, 600 V CoolMOS S5, 3-Pin TO-247 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current20 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • TWD180.10
    毎管:30 個
SPW20N60S5FKSA1 N-Channel MOSFET, 20 A, 600 V CoolMOS S5, 3-Pin TO-247 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current20 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • TWD115.00
Infineon IRG4BC30UDPBF IGBT, 23 A 600 V, 3-Pin TO-220AB
  • Maximum Continuous Collector Current23 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Package TypeTO-220AB
  • Mounting TypeThrough Hole
See similar products in IGBTs
  • TWD33.00
    毎管:50 個
IRF9540NPBF P-Channel MOSFET, 23 A, 100 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeP
  • Maximum Continuous Drain Current23 A
  • Maximum Drain Source Voltage100 V
  • Package TypeTO-220AB
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • TWD3,681.00
Infineon, T560N12TOFXPSA1, Thyristor, 1200V 559A, 200mA 5-Pin, BG-T4814K0-1
  • Rated Average On-State Current559A
  • Thyristor TypePCT
  • Package TypeBG-T4814K0-1
  • Repetitive Peak Reverse Voltage1200V
  • Surge Current Rating7100A
See similar products in Thyristors
  • TWD38.00
IRF9540NPBF P-Channel MOSFET, 23 A, 100 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeP
  • Maximum Continuous Drain Current23 A
  • Maximum Drain Source Voltage100 V
  • Package TypeTO-220AB
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • TWD1.00
    個 (在毎卷:10000)
Infineon, BCR135E6433HTMA1 NPN Digital Transistor 50 V 10 kΩ, Ratio Of 0.21, 3-Pin SOT-23
  • Transistor TypeNPN
  • Number of Elements per Chip1
  • Maximum Collector Emitter Voltage50 V
  • Typical Input Resistor10 kΩ
  • Mounting TypeSurface Mount
See similar products in Digital Transistors
  • TWD73.70
    /個 (每包:6個)
IPW50R190CEFKSA1 N-Channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-247 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current18.5 A
  • Maximum Drain Source Voltage550 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
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