Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1
- RS庫存編號:
- 145-9487
- 製造零件編號:
- 2N7002DWH6327XTSA1
- 製造商:
- Infineon
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已增加
單價（不含稅） 個 (在毎卷：3000)
TWD2.80
(不含稅)
TWD2.94
(含稅)
| 單位 | Per unit | Per Reel* |
| 3000 - 12000 | TWD2.80 | TWD8,400.00 |
| 15000 + | TWD2.40 | TWD7,200.00 |
| * 參考價格 | ||
- RS庫存編號:
- 145-9487
- 製造零件編號:
- 2N7002DWH6327XTSA1
- 製造商:
- Infineon
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Series | OptiMOS |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 2mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 2 |
| Width | 1.25mm |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Height | 0.8mm |
| Minimum Operating Temperature | -55 °C |