MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



Looking for MOSFET Drivers?


...
顯示內容 隱藏內容

篩選條件

正在檢視 1 - 20,共 11578 項產品
Results per page
Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS庫存編號 122-0587
製造零件編號MMBF170-7-F
TWD1.7000
個 (在毎卷:3000)
單位
N 500 mA 60 V 5.3 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 3V - 300 mW Single 1
RS庫存編號 708-2393
製造零件編號MMBF170-7-F
TWD4.6000
/個 (每包:50個)
單位
N 500 mA 60 V 5.3 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 3V - 300 mW Single 1
RS庫存編號 897-7179
製造零件編號SPW21N50C3FKSA1
BrandInfineon
TWD91.8000
/個 (每包:4個)
單位
N 21 A 560 V 190 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.9V 2.1V 208 W Single 1
RS庫存編號 145-8724
製造零件編號SPW21N50C3FKSA1
BrandInfineon
TWD85.3000
毎管:30 個
單位
N 21 A 560 V 190 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.9V 2.1V 208 W Single 1
RS庫存編號 159-6516
製造零件編號IRFP460BPBF
BrandVishay
TWD55.1000
毎管:25 個
單位
N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS庫存編號 787-9140
製造零件編號IRFP460BPBF
BrandVishay
TWD110.0000
單位
N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS庫存編號 739-0224
製造零件編號2N7000TA
TWD6.8000
/個 (每包:10個)
單位
N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement - 0.3V 400 mW Single 1
RS庫存編號 169-8553
製造零件編號2N7000
TWD2.6000
個 (在毎卷:10000)
單位
N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement - 0.8V 400 mW Single 1
RS庫存編號 903-4074
製造零件編號2N7000-D26Z
TWD4.1000
/個 (每包:100個)
單位
N 200 mA 60 V 9 Ω TO-92 Through Hole 3 -40 V, +40 V Enhancement - 0.8V 400 mW Single 1
RS庫存編號 124-1310
製造零件編號2N7000TA
TWD2.0000
個 (在毎卷:2000)
單位
N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement - 0.3V 400 mW Single 1
RS庫存編號 671-4733
製造零件編號2N7000
TWD7.7000
/個 (每包:20個)
單位
N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement - 0.8V 400 mW Single 1
RS庫存編號 166-3296
製造零件編號FDPF770N15A
TWD32.0000
毎管:50 個
單位
N 10 A 150 V 77 mΩ TO-220F Through Hole 3 -20 V, +20 V Enhancement - 2V 21 W Single 1
RS庫存編號 864-8625
製造零件編號FDPF770N15A
TWD34.0000
/個 (每包:10個)
單位
N 10 A 150 V 77 mΩ TO-220F Through Hole 3 -20 V, +20 V Enhancement - 2V 21 W Single 1
RS庫存編號 177-5507
製造零件編號D1008UK
BrandSemelab
TWD3,738.0000
Each (In a Tray of 25)
單位
N 10 A 70 V - DK Panel Mount 5 -20 V, +20 V Enhancement 7V - 175 W Common Source 2
RS庫存編號 738-7663
製造零件編號D1008UK
BrandSemelab
TWD3,738.0000
單位
N 10 A 70 V - DK Panel Mount 5 -20 V, +20 V Enhancement 7V - 175 W Common Source 2
RS庫存編號 124-9056
製造零件編號IRFS7530TRL7PP
BrandInfineon
TWD57.9000
個 (在毎卷:800)
單位
N 240 A 60 V 1.4 mΩ D2PAK (TO-263) Surface Mount 7 -20 V, +20 V Enhancement 3.7V 2.1V 375 W Single 1
RS庫存編號 541-0862
製造零件編號IRFP9240PBF
BrandVishay
TWD87.0000
單位
P 12 A 200 V 500 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
RS庫存編號 178-0786
製造零件編號IRFP9240PBF
BrandVishay
TWD78.8000
毎管:25 個
單位
- - - - - - - - - - - - - -
RS庫存編號 170-4341
製造零件編號DN2540N3-G
BrandMicrochip
TWD18.5000
個 (以毎袋:1000)
單位
- - - - - - - - - - - - - -
RS庫存編號 829-3235
製造零件編號DN2540N3-G
BrandMicrochip
TWD24.4000
/個 (每包:10個)
單位
N 120 mA 400 V 25 Ω TO-92 Through Hole 3 -20 V, +20 V Depletion 3.5V - 1 W Single 1