N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-247 Infineon IPW60R190C6FKSA1
- RS庫存編號:
- 911-5029
- 製造零件編號:
- IPW60R190C6FKSA1
- 製造商:
- Infineon
當前暫無庫存，可於03/05/2024發貨，6 工作日送達。
已增加
單價（不含稅） 毎管：30 個
TWD102.80
(不含稅)
TWD107.94
(含稅)
| 單位 | Per unit | Per Tube* |
| 30 - 30 | TWD102.80 | TWD3,084.00 |
| 60 - 90 | TWD100.50 | TWD3,015.00 |
| 120 + | TWD93.40 | TWD2,802.00 |
| * 參考價格 | ||
- RS庫存編號:
- 911-5029
- 製造零件編號:
- IPW60R190C6FKSA1
- 製造商:
- Infineon
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- DE
產品詳細資訊
Infineon CoolMOS™C6/C7 Power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20.2 A |
| Maximum Drain Source Voltage | 650 V |
| Series | CoolMOS C6 |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 151 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 16.13mm |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Width | 5.21mm |
| Number of Elements per Chip | 1 |
| Height | 21.1mm |
| Minimum Operating Temperature | -55 °C |