N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190P6FKSA1
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180 現貨庫存，可於6工作日發貨。
單價（不含稅） /個 (每包:5個)
TWD94.20
(不含稅)
TWD98.91
(含稅)
| 單位 | Per unit | Per Pack* |
| 5 - 45 | TWD94.20 | TWD471.00 |
| 50 - 245 | TWD80.40 | TWD402.00 |
| 250 - 495 | TWD65.60 | TWD328.00 |
| 500 - 1245 | TWD65.00 | TWD325.00 |
| 1250 + | TWD64.20 | TWD321.00 |
| * 參考價格 | ||
已增加
- RS庫存編號:
- 110-9099
- 製造零件編號:
- IPW60R190P6FKSA1
- 製造商:
- Infineon
Infineon CoolMOS™E6/P6 series Power MOSFET
| 屬性 | 值 |
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 151 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Length | 16.13mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 0.9V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Width | 5.21mm |
| Height | 21.1mm |
| Series | CoolMOS P6 |