N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF
- RS庫存編號:
- 919-5025
- 製造零件編號:
- IRF630NPBF
- 製造商:
- Infineon
500 現貨庫存，可於6工作日發貨。
已增加
單價（不含稅） 毎管：50 個
TWD28.30
(不含稅)
TWD29.72
(含稅)
| 單位 | Per unit | Per Tube* |
| 50 - 50 | TWD28.30 | TWD1,415.00 |
| 100 - 150 | TWD25.10 | TWD1,255.00 |
| 200 + | TWD23.40 | TWD1,170.00 |
| * 參考價格 | ||
- RS庫存編號:
- 919-5025
- 製造零件編號:
- IRF630NPBF
- 製造商:
- Infineon
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.3 A |
| Maximum Drain Source Voltage | 200 V |
| Series | HEXFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 82 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10.54mm |
| Width | 4.69mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Height | 8.77mm |
| Minimum Operating Temperature | -55 °C |