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Discrete Semiconductors

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Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • TWD107.80
    /個 (每包:5個)
Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
NPN Bipolar Transistor, 1 A, 120 V, 3-Pin TO-126IS
  • TWD19.00
    /個 (每包:10個)
NPN Bipolar Transistor, 1 A, 120 V, 3-Pin TO-126IS
  • Transistor TypeNPN
  • Maximum DC Collector Current1 A
  • Maximum Collector Emitter Voltage120 V
  • Package TypeTO-126IS
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
N-Channel MOSFET, 100 mA, 30 V, 3-Pin SSM Toshiba SSM3K15FS(TE85L,F)
  • TWD4.00
    /個 (每包:10個)
N-Channel MOSFET, 100 mA, 30 V, 3-Pin SSM Toshiba SSM3K15FS(TE85L,F)
  • Channel TypeN
  • Maximum Continuous Drain Current100 mA
  • Maximum Drain Source Voltage30 V
  • Package TypeSSM
  • Mounting TypeSurface Mount
See similar products in MOSFETs
2SC2240-BL(F) NPN Bipolar Transistor, 100 mA, 120 V, 3-Pin TO-92
  • TWD8.80
    /個 (每包:10個)
2SC2240-BL(F) NPN Bipolar Transistor, 100 mA, 120 V, 3-Pin TO-92
  • Transistor TypeNPN
  • Maximum DC Collector Current100 mA
  • Maximum Collector Emitter Voltage120 V
  • Package TypeTO-92
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
  • TWD100.40
    /個 (每包:5個)
Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
  • Maximum Continuous Collector Current15 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation30 W
  • Package TypeTO-220SIS
See similar products in IGBTs
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • TWD395.00個
  • Also available in industry standard packaging
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current62 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
  • TWD42.70
    毎管：50 個
Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
  • Maximum Continuous Collector Current15 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation30 W
  • Package TypeTO-220SIS
See similar products in IGBTs
P-Channel MOSFET Transistor, 5 A, 60 V, 3-Pin TPS
  • TWD21.00
    /個 (每包:5個)
  • Also available in industry standard packaging
P-Channel MOSFET Transistor, 5 A, 60 V, 3-Pin TPS
  • Channel TypeP
  • Maximum Continuous Drain Current5 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTPS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • TWD271.00個
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current62 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
N-Channel MOSFET Transistor, 13 A, 250 V, 3-Pin TO-220NIS
  • TWD69.00個
  • Also available in industry standard packaging
N-Channel MOSFET Transistor, 13 A, 250 V, 3-Pin TO-220NIS
  • Channel TypeN
  • Maximum Continuous Drain Current13 A
  • Maximum Drain Source Voltage250 V
  • Package TypeTO-220NIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
Toshiba 30V 1.5A, Schottky Diode, 2-Pin S-FLAT CRS08(T5L,TEM,Q)
  • TWD3.70
    /個 (每包:10個)
Toshiba 30V 1.5A, Schottky Diode, 2-Pin S-FLAT CRS08(T5L,TEM,Q)
  • Mounting TypeSurface Mount
  • Package TypeS-FLAT
  • Maximum Continuous Forward Current1.5A
  • Peak Reverse Repetitive Voltage30V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • TWD525.60
    毎管：30 個
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current62 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
Toshiba 30V 3A, Schottky Diode, 2-Pin S-FLAT CRS15(T5L,TEMQ)
  • TWD3.60
    /個 (每包:10個)
Toshiba 30V 3A, Schottky Diode, 2-Pin S-FLAT CRS15(T5L,TEMQ)
  • Mounting TypeSurface Mount
  • Package TypeS-FLAT
  • Maximum Continuous Forward Current3A
  • Peak Reverse Repetitive Voltage30V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
Toshiba 2SC5712(TE12L,F) NPN Bipolar Transistor, 3 A, 50 V, 3-Pin SC-62
  • TWD15.20
    /個 (每包:10個)
Toshiba 2SC5712(TE12L,F) NPN Bipolar Transistor, 3 A, 50 V, 3-Pin SC-62
  • Transistor TypeNPN
  • Maximum DC Collector Current3 A
  • Maximum Collector Emitter Voltage50 V
  • Package TypeSC-62
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
Toshiba RN1102(F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
  • TWD2.80
    /個 (每包:5個)
Toshiba RN1102(F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
  • Transistor TypeNPN
  • Maximum DC Collector Current100 mA
  • Maximum Collector Emitter Voltage50 V
  • Package TypeESM
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
Toshiba 30V 3A, Schottky Diode, 2-Pin M-FLAT CMS01(T2L,TEM,Q)
  • TWD10.10
    /個 (每包:10個)
Toshiba 30V 3A, Schottky Diode, 2-Pin M-FLAT CMS01(T2L,TEM,Q)
  • Mounting TypeSurface Mount
  • Package TypeM-FLAT
  • Maximum Continuous Forward Current3A
  • Peak Reverse Repetitive Voltage30V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-247 Toshiba TK16N60W5,S1VF(S
  • TWD80.20
    /個 (每包:5個)
N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-247 Toshiba TK16N60W5,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current15.8 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • Mounting TypeThrough Hole
See similar products in MOSFETs
Toshiba 2SD1223(TE16L1,NQ) NPN Darlington Transistor, 4 A 80 V HFE:2000, 3-Pin DPAK
  • TWD35.00
    /個 (每包:5個)
Toshiba 2SD1223(TE16L1,NQ) NPN Darlington Transistor, 4 A 80 V HFE:2000, 3-Pin DPAK
  • Transistor TypeNPN
  • Maximum Continuous Collector Current4 A
  • Maximum Collector Emitter Voltage80 V
  • Maximum Emitter Base Voltage5 V
  • Package TypeDPAK (TO-252)
See similar products in Darlington Pairs
N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • TWD89.70
    毎管：50 個
N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current100 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • TWD50.60
    /個 (每包:5個)
N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current263 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
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