N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
- RS庫存編號:
- 891-2853
- 製造零件編號:
- TK100A06N1,S4X(S
- 製造商:
- Toshiba
當前暫無庫存，可於12/06/2024發貨，4 工作日送達。
已增加
單價（不含稅） 個 (每包:5個)
TWD62.80
(不含稅)
TWD65.94
(含稅)
| 單位 | Per unit | Per Pack* |
| 5 - 10 | TWD62.80 | TWD314.00 |
| 15 - 20 | TWD61.80 | TWD309.00 |
| 25 + | TWD60.40 | TWD302.00 |
| * 參考價格 | ||
- RS庫存編號:
- 891-2853
- 製造零件編號:
- TK100A06N1,S4X(S
- 製造商:
- Toshiba
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Toshiba
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 263 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220SIS |
| Series | TK |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V |
| Width | 4.5mm |
| Transistor Material | Si |
| Height | 15mm |
| Forward Diode Voltage | 1.2V |