Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
- RS庫存編號:
- 796-5046
- 製造零件編號:
- GT15J341
- 製造商:
- Toshiba
30 現貨庫存，可於6工作日發貨。
已增加
單價（不含稅） 個 (每包:5個)
TWD58.40
(不含稅)
TWD61.32
(含稅)
| 單位 | Per unit | Per Pack* |
| 5 - 10 | TWD58.40 | TWD292.00 |
| 15 - 20 | TWD57.40 | TWD287.00 |
| 25 + | TWD56.60 | TWD283.00 |
| * 參考價格 | ||
- RS庫存編號:
- 796-5046
- 製造零件編號:
- GT15J341
- 製造商:
- Toshiba
法例與合規
產品詳細資訊
IGBT Discretes, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 15 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 30 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |