IXYS

Discrete Semiconductors

CATEGORIES

Discrete Semiconductors
(63) Bridge Rectifiers
(107) IGBTs
(274) MOSFETs
(199) Schottky Diodes & Rectifiers
(22) Switching Diodes
(122) Thyristors
(2) TRIACs
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Description
Part Details
N-Channel MOSFET, 24 A, 1000 V, 3-Pin TO-264 IXYS IXFK24N100Q3
  • TWD764.30
    毎管：25 個
N-Channel MOSFET, 24 A, 1000 V, 3-Pin TO-264 IXYS IXFK24N100Q3
  • Channel TypeN
  • Maximum Continuous Drain Current24 A
  • Maximum Drain Source Voltage1000 V
  • SeriesHiperFET, Q3-Class
  • Package TypeTO-264
See similar products in MOSFETs
IXYS 600V 37A, Rectifier Diode, 2-Pin TO-247AD DSEI30-06A
  • TWD134.90
    毎管：30 個
IXYS 600V 37A, Rectifier Diode, 2-Pin TO-247AD DSEI30-06A
  • Mounting TypeThrough Hole
  • Package TypeTO-247AD
  • Maximum Continuous Forward Current37A
  • Peak Reverse Repetitive Voltage600V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXYS IXFN110N60P3
  • TWD1,080.80
    毎管：10 個
N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXYS IXFN110N60P3
  • Channel TypeN
  • Maximum Continuous Drain Current90 A
  • Maximum Drain Source Voltage600 V
  • SeriesHiperFET, Polar3
  • Package TypeSOT-227
See similar products in MOSFETs
IXYS 600V 37A, Rectifier Diode, 2-Pin TO-247AD DSEI30-06A
  • TWD150.00個
IXYS 600V 37A, Rectifier Diode, 2-Pin TO-247AD DSEI30-06A
  • Mounting TypeThrough Hole
  • Package TypeTO-247AD
  • Maximum Continuous Forward Current37A
  • Peak Reverse Repetitive Voltage600V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
IXYS 1200V 8A, Dual Rectifier Diode, 3-Pin TO-220AB DSP8-12A
  • TWD82.20
    /個 (每包:5個)
  • Also available in industry standard packaging
IXYS 1200V 8A, Dual Rectifier Diode, 3-Pin TO-220AB DSP8-12A
  • Mounting TypeThrough Hole
  • Package TypeTO-220AB
  • Maximum Continuous Forward Current8A
  • Peak Reverse Repetitive Voltage1200V
  • Diode ConfigurationSeries
See similar products in Schottky Diodes & Rectifiers
IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole
  • TWD450.00個
  • Also available in industry standard packaging
IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole
  • Maximum Continuous Collector Current64 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation480 W
  • Package TypeTO-247
See similar products in IGBTs
IXYS Switching Diode, 2-Pin TO-220AC DSEP15-06A
  • TWD67.10
    毎管：50 個
IXYS Switching Diode, 2-Pin TO-220AC DSEP15-06A
  • Diode ConfigurationSingle
  • Mounting TypeThrough Hole
  • Number of Elements per Chip1
  • Package TypeTO-220AC
  • Diode TechnologySilicon Junction
See similar products in Switching Diodes
IXYS MCC200-16IO1, Dual Thyristor Module 1600V, 216A 150mA
  • TWD2,917.70
    個 (以毎盒：6)
IXYS MCC200-16IO1, Dual Thyristor Module 1600V, 216A 150mA
  • Rated Average On-State Current216A
  • Thyristor TypeSCR Module
  • Package TypeY4 M6
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating8.6kA
See similar products in Thyristors
IXYS MCC200-16IO1, Dual Thyristor Module 1600V, 216A 150mA
  • TWD2,918.00個
IXYS MCC200-16IO1, Dual Thyristor Module 1600V, 216A 150mA
  • Rated Average On-State Current216A
  • Thyristor TypeSCR Module
  • Package TypeY4 M6
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating8.6kA
See similar products in Thyristors
  • RS庫存編號
    462-186
  • Brand
    IXYS
  • 製造零件編號
    MCC200-16IO1
N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXYS IXFN180N15P
  • TWD886.00個
  • Also available in industry standard packaging
N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXYS IXFN180N15P
  • Channel TypeN
  • Maximum Continuous Drain Current150 A
  • Maximum Drain Source Voltage150 V
  • SeriesHiperFET, Polar
  • Package TypeSOT-227B
See similar products in MOSFETs
  • RS庫存編號
    194-259
  • Brand
    IXYS
  • 製造零件編號
    IXFN180N15P
N-Channel MOSFET, 24 A, 1000 V, 3-Pin TO-264 IXYS IXFK24N100Q3
  • TWD903.00個
  • Also available in industry standard packaging
N-Channel MOSFET, 24 A, 1000 V, 3-Pin TO-264 IXYS IXFK24N100Q3
  • Channel TypeN
  • Maximum Continuous Drain Current24 A
  • Maximum Drain Source Voltage1000 V
  • Package TypeTO-264
  • SeriesHiperFET, Q3-Class
See similar products in MOSFETs
IXYS Switching Diode, 2-Pin TO-220AC DSEP15-06A
  • TWD74.60
    /個 (每包:5個)
  • Also available in industry standard packaging
IXYS Switching Diode, 2-Pin TO-220AC DSEP15-06A
  • Diode ConfigurationSingle
  • Number of Elements per Chip1
  • Mounting TypeThrough Hole
  • Package TypeTO-220AC
  • Diode TechnologySilicon Junction
See similar products in Switching Diodes
IXYS 1000V 30A, Rectifier Diode, 2-Pin TO-247AD DSEI30-10A
  • TWD135.20
    毎管：30 個
IXYS 1000V 30A, Rectifier Diode, 2-Pin TO-247AD DSEI30-10A
  • Mounting TypeThrough Hole
  • Package TypeTO-247AD
  • Maximum Continuous Forward Current30A
  • Peak Reverse Repetitive Voltage1000V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
IXYS 1200V 60A, Dual Rectifier Diode, 4-Pin SOT-227B DSEP2X60-12A
  • TWD1,347.10
    毎管：10 個
IXYS 1200V 60A, Dual Rectifier Diode, 4-Pin SOT-227B DSEP2X60-12A
  • Mounting TypePanel Mount
  • Package TypeSOT-227B
  • Maximum Continuous Forward Current60A
  • Peak Reverse Repetitive Voltage1200V
  • Diode ConfigurationIsolated
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P
  • TWD1,112.30
    毎管：10 個
N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P
  • Channel TypeN
  • Maximum Continuous Drain Current53 A
  • Maximum Drain Source Voltage800 V
  • Package TypeSOT-227
  • SeriesHiperFET, Polar
See similar products in MOSFETs
N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXYS IXFN180N15P
  • TWD787.30
    毎管：10 個
N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXYS IXFN180N15P
  • Channel TypeN
  • Maximum Continuous Drain Current150 A
  • Maximum Drain Source Voltage150 V
  • Package TypeSOT-227B
  • SeriesHiperFET, Polar
See similar products in MOSFETs
IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole
  • TWD414.20
    毎管：30 個
IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole
  • Maximum Continuous Collector Current64 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation480 W
  • Package TypeTO-247
See similar products in IGBTs
IXYS 1200V 11A, Dual Rectifier Diode, 3-Pin TO-220AB DSP8-12A
  • TWD73.80
    毎管：50 個
IXYS 1200V 11A, Dual Rectifier Diode, 3-Pin TO-220AB DSP8-12A
  • Mounting TypeThrough Hole
  • Package TypeTO-220AB
  • Maximum Continuous Forward Current11A
  • Peak Reverse Repetitive Voltage1200V
  • Diode ConfigurationSeries
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 98 A, 500 V, 3-Pin TO-264 IXYS IXFK98N50P3
  • TWD490.10
    毎管：25 個
N-Channel MOSFET, 98 A, 500 V, 3-Pin TO-264 IXYS IXFK98N50P3
  • Channel TypeN
  • Maximum Continuous Drain Current98 A
  • Maximum Drain Source Voltage500 V
  • SeriesHiperFET, Polar3
  • Package TypeTO-264
See similar products in MOSFETs
IXYS 1000V 30A, Rectifier Diode, 2-Pin TO-247AD DSEI30-10A
  • TWD151.00個
IXYS 1000V 30A, Rectifier Diode, 2-Pin TO-247AD DSEI30-10A
  • Mounting TypeThrough Hole
  • Package TypeTO-247AD
  • Maximum Continuous Forward Current30A
  • Peak Reverse Repetitive Voltage1000V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
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