N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P
- RS庫存編號:
- 194-350
- 製造零件編號:
- IXFN60N80P
- 製造商:
- IXYS
當前暫無庫存，可於27/05/2024發貨，6 工作日送達。
已增加
單價（不含稅） 個
TWD1,192.00
(不含稅)
TWD1,251.60
(含稅)
| 單位 | Per unit |
| 1 - 2 | TWD1,192.00 |
| 3 - 4 | TWD1,173.00 |
| 5 + | TWD1,154.00 |
- RS庫存編號:
- 194-350
- 製造零件編號:
- IXFN60N80P
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 53 A |
| Maximum Drain Source Voltage | 800 V |
| Series | HiperFET, Polar |
| Package Type | SOT-227B |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 140 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.04 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 38.23mm |
| Maximum Operating Temperature | +150 °C |
| Width | 25.42mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 250 nC @ 10 V |
| Height | 9.6mm |
| Minimum Operating Temperature | -55 °C |