IXYS

Discrete Semiconductors

CATEGORIES

Discrete Semiconductors
(63) Bridge Rectifiers
(107) IGBTs
(274) MOSFETs
(199) Schottky Diodes & Rectifiers
(22) Switching Diodes
(122) Thyristors
(2) TRIACs
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IXYS CLA110MB1200NA, Dual Thyristor Module 1200V, 50A 80mA
  • TWD663.80
    毎管：10 個
IXYS CLA110MB1200NA, Dual Thyristor Module 1200V, 50A 80mA
  • Rated Average On-State Current50A
  • Thyristor TypeSCR
  • Package TypeSOT-227B
  • Repetitive Peak Reverse Voltage1200V
  • Surge Current Rating1.19kA
See similar products in Thyristors
IXYS CS20-16IO1, Thyristor 1600V, 19A 65mA
  • TWD139.30
    毎管：30 個
IXYS CS20-16IO1, Thyristor 1600V, 19A 65mA
  • Rated Average On-State Current19A
  • Thyristor TypeSCR
  • Package TypeTO-247AD
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating215A
See similar products in Thyristors
IXYS 300V 2 x 30A, Dual Fast Recovery Epitaxial Diode Diode, 4-Pin SOT-227B DSEP2x31-03A
  • TWD795.70
    毎管：10 個
IXYS 300V 2 x 30A, Dual Fast Recovery Epitaxial Diode Diode, 4-Pin SOT-227B DSEP2x31-03A
  • Mounting TypePanel Mount
  • Package TypeSOT-227B
  • Maximum Continuous Forward Current2 x 30A
  • Peak Reverse Repetitive Voltage300V
  • Diode ConfigurationIsolated
See similar products in Schottky Diodes & Rectifiers
IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount
  • TWD2,824.00個
IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount
  • Maximum Continuous Collector Current90 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Package TypeY4 M5
  • ConfigurationSeries
See similar products in IGBTs
N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3
  • TWD1,229.50
    毎管：25 個
N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3
  • Channel TypeN
  • Maximum Continuous Drain Current82 A
  • Maximum Drain Source Voltage600 V
  • SeriesHiperFET, Q3-Class
  • Package TypePLUS264
See similar products in MOSFETs
IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount
  • TWD891.30
    毎管：10 個
IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount
  • Maximum Continuous Collector Current88 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation290 W
  • Package TypeSOT-227B
See similar products in IGBTs
N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXYS IXFR64N50Q3
  • TWD993.00
    毎管：30 個
N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXYS IXFR64N50Q3
  • Channel TypeN
  • Maximum Continuous Drain Current45 A
  • Maximum Drain Source Voltage500 V
  • SeriesHiperFET, Q-Class
  • Package TypeISOPLUS247
See similar products in MOSFETs
IXYS 1200V 260A, Dual Rectifier Diode, 3-Pin Y4-M6 MEE250-12DA
  • TWD2,311.50
    個 (以毎盒：6)
IXYS 1200V 260A, Dual Rectifier Diode, 3-Pin Y4-M6 MEE250-12DA
  • Mounting TypePanel Mount
  • Package TypeY4-M6
  • Maximum Continuous Forward Current260A
  • Peak Reverse Repetitive Voltage1200V
  • Diode ConfigurationSeries
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-247 IXYS IXFH80N25X3
  • TWD286.50
    毎管：30 個
N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-247 IXYS IXFH80N25X3
  • Channel TypeN
  • Maximum Continuous Drain Current80 A
  • Maximum Drain Source Voltage250 V
  • Package TypeTO-247
  • SeriesHiperFET
See similar products in MOSFETs
IXYS Bridge Rectifier Module, 40A, 1200V, 4-Pin
  • TWD860.00個
IXYS Bridge Rectifier Module, 40A, 1200V, 4-Pin
  • Bridge TypeSingle Phase
  • Peak Average Forward Current40A
  • Peak Reverse Repetitive Voltage1200V
  • Mounting TypePanel Mount
  • Package TypeSOT-227B
See similar products in Bridge Rectifiers
  • RS庫存編號
    193-256
  • Brand
    IXYS
  • 製造零件編號
    VBO40-12NO6
IXYS Bridge Rectifier Module, 127A, 1200V, 3-phase, 5-Pin
  • TWD1,579.00個
IXYS Bridge Rectifier Module, 127A, 1200V, 3-phase, 5-Pin
  • Bridge TypeThree Phase
  • Peak Average Forward Current127A
  • Peak Reverse Repetitive Voltage1200V
  • Mounting TypePanel Mount
  • Package TypePWS E 1
See similar products in Bridge Rectifiers
  • RS庫存編號
    193-183
  • Brand
    IXYS
  • 製造零件編號
    VUO110-12NO7
IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole
  • TWD431.00個
  • Also available in industry standard packaging
IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole
  • Maximum Continuous Collector Current90 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation625 W
  • Package TypeTO-247
See similar products in IGBTs
IXYS MCC310-16IO1, Dual Thyristor Module 1600V, 320A 150mA
  • TWD4,794.50
    個 (以毎盒：2)
IXYS MCC310-16IO1, Dual Thyristor Module 1600V, 320A 150mA
  • Rated Average On-State Current320A
  • Thyristor TypeSCR Module
  • Package TypeY2 DCB
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating9.8kA
See similar products in Thyristors
IXYS Bridge Rectifier, 28A, 1600V, 3-phase, 5-Pin
  • TWD547.40
    毎管：25 個
IXYS Bridge Rectifier, 28A, 1600V, 3-phase, 5-Pin
  • Bridge TypeThree Phase
  • Peak Average Forward Current28A
  • Peak Reverse Repetitive Voltage1600V
  • Mounting TypeThrough Hole
  • Package TypeISOPLUS-I4-PAC
See similar products in Bridge Rectifiers
IXYS CLA50E1200HB, Thyristor 1200V, 50A 80mA
  • TWD185.00
    /個 (每包:2個)
IXYS CLA50E1200HB, Thyristor 1200V, 50A 80mA
  • Rated Average On-State Current50A
  • Thyristor TypeSCR
  • Package TypeTO-247
  • Repetitive Peak Reverse Voltage1200V
  • Surge Current Rating700A
See similar products in Thyristors
IXYS 1600V 36A, Dual Rectifier Diode, 3-Pin TO-240AA MDD26-16N1B
  • TWD842.00個
IXYS 1600V 36A, Dual Rectifier Diode, 3-Pin TO-240AA MDD26-16N1B
  • Mounting TypePanel Mount
  • Package TypeTO-240AA
  • Maximum Continuous Forward Current36A
  • Peak Reverse Repetitive Voltage1600V
  • Diode ConfigurationSeries
See similar products in Schottky Diodes & Rectifiers
  • RS庫存編號
    192-893
  • Brand
    IXYS
  • 製造零件編號
    MDD26-16N1B
IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole
  • TWD396.20
    毎管：30 個
IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole
  • Maximum Continuous Collector Current90 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation625 W
  • Package TypeTO-247
See similar products in IGBTs
N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXYS IXFN132N50P3
  • TWD1,130.00
    毎管：10 個
N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXYS IXFN132N50P3
  • Channel TypeN
  • Maximum Continuous Drain Current112 A
  • Maximum Drain Source Voltage500 V
  • Package TypeSOT-227
  • SeriesHiperFET, Polar3
See similar products in MOSFETs
N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXYS IXTP8N65X2
  • TWD61.10
    毎管：50 個
N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXYS IXTP8N65X2
  • Channel TypeN
  • Maximum Continuous Drain Current8 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO-220
  • SeriesX2-Class
See similar products in MOSFETs
N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 IXYS IXTH48N65X2
  • TWD326.00個
  • Also available in industry standard packaging
N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 IXYS IXTH48N65X2
  • Channel TypeN
  • Maximum Continuous Drain Current48 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO-247
  • SeriesX2-Class
See similar products in MOSFETs
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