IXYS

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IXYS MMO62-12io6, Dual Thyristor Module 1200V, 30A 150mA
  • TWD911.50
    毎管：10 個
IXYS MMO62-12io6, Dual Thyristor Module 1200V, 30A 150mA
  • Rated Average On-State Current30A
  • Thyristor TypeSCR
  • Package TypeSOT-227B
  • Repetitive Peak Reverse Voltage1200V
  • Surge Current Rating430A
See similar products in Thyristors
IXYS N0795YN180, Thyristor 1000 to 1800V, 795A 150mA
  • TWD2,650.50
    個 (以毎盒：24)
IXYS N0795YN180, Thyristor 1000 to 1800V, 795A 150mA
  • Rated Average On-State Current795A
  • Thyristor TypePCT
  • Repetitive Peak Reverse Voltage1000 to 1800V
  • Surge Current Rating10500A
  • Mounting TypeScrew Mount
See similar products in Thyristors
N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXYS IXFK64N60P3
  • TWD410.70
    毎管：25 個
N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXYS IXFK64N60P3
  • Channel TypeN
  • Maximum Continuous Drain Current64 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-264
  • SeriesHiperFET, Polar3
See similar products in MOSFETs
IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole
  • TWD785.00個
  • Also available in industry standard packaging
IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole
  • Maximum Continuous Collector Current225 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation1.15 kW
  • Package TypePLUS247
See similar products in IGBTs
N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXYS IXFH96N20P
  • TWD260.30
    毎管：30 個
N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXYS IXFH96N20P
  • Channel TypeN
  • Maximum Continuous Drain Current96 A
  • Maximum Drain Source Voltage200 V
  • SeriesHiperFET, Polar
  • Package TypeTO-247
See similar products in MOSFETs
IXYS CS30-16IO1, Thyristor 1600V, 31A 65mA
  • TWD188.30
    毎管：30 個
IXYS CS30-16IO1, Thyristor 1600V, 31A 65mA
  • Rated Average On-State Current31A
  • Thyristor TypeSCR
  • Package TypeTO-247AD
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating320A
See similar products in Thyristors
N-Channel MOSFET, 66 A, 850 V, 3-Pin TO-264 IXYS IXFK66N85X
  • TWD717.10
    毎管：25 個
N-Channel MOSFET, 66 A, 850 V, 3-Pin TO-264 IXYS IXFK66N85X
  • Channel TypeN
  • Maximum Continuous Drain Current66 A
  • Maximum Drain Source Voltage850 V
  • Package TypeTO-264
  • SeriesHiperFET
See similar products in MOSFETs
IXYS N0910LC200, Thyristor 2000V, 910A 300mA
  • TWD8,988.00個
IXYS N0910LC200, Thyristor 2000V, 910A 300mA
  • Rated Average On-State Current910A
  • Thyristor TypePCT
  • Package TypeN0910
  • Repetitive Peak Reverse Voltage2000V
  • Surge Current Rating9200A
See similar products in Thyristors
IXYS IXDD604SIATR 2 8-Pin, SOIC
  • TWD66.60
    /個 (每包:5個)
  • Also available in industry standard packaging
IXYS IXDD604SIATR 2 8-Pin, SOIC
  • Pin Count8
  • Package TypeSOIC
  • TopologyLow Side
  • Number of Drivers2
  • Mounting TypeSurface Mount
See similar products in Gate Drivers
N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXYS IXFH74N20P
  • TWD243.00個
  • Also available in industry standard packaging
N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXYS IXFH74N20P
  • Channel TypeN
  • Maximum Continuous Drain Current74 A
  • Maximum Drain Source Voltage200 V
  • Package TypeTO-247
  • SeriesHiperFET, Polar
See similar products in MOSFETs
IXYS 1200V 45A, Rectifier Diode, 2-Pin TO-247AD DSI45-12A
  • TWD132.00
    /個 (每包:2個)
  • Also available in industry standard packaging
IXYS 1200V 45A, Rectifier Diode, 2-Pin TO-247AD DSI45-12A
  • Mounting TypeThrough Hole
  • Package TypeTO-247AD
  • Maximum Continuous Forward Current45A
  • Peak Reverse Repetitive Voltage1200V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount
  • TWD1,525.80
    毎管：10 個
IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount
  • Maximum Continuous Collector Current105 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation500 W
  • Package TypeSOT-227B
See similar products in IGBTs
IXYS IXDN609SIATR 1 8-Pin, SOIC
  • TWD64.00
    /個 (每包:5個)
  • Also available in industry standard packaging
IXYS IXDN609SIATR 1 8-Pin, SOIC
  • Pin Count8
  • Package TypeSOIC
  • TopologyLow Side
  • Number of Drivers1
  • Mounting TypeSurface Mount
See similar products in Gate Drivers
IXYS 1600V 36A, Dual Rectifier Diode, 3-Pin TO-240AA MDD26-16N1B
  • TWD711.70
    個 (以毎盒：36)
IXYS 1600V 36A, Dual Rectifier Diode, 3-Pin TO-240AA MDD26-16N1B
  • Mounting TypePanel Mount
  • Package TypeTO-240AA
  • Maximum Continuous Forward Current36A
  • Peak Reverse Repetitive Voltage1600V
  • Diode ConfigurationSeries
See similar products in Schottky Diodes & Rectifiers
IXYS IXDI609SIATR 1 8-Pin, SOIC
  • TWD37.90
    個 (在毎卷：2000)
IXYS IXDI609SIATR 1 8-Pin, SOIC
  • Pin Count8
  • Package TypeSOIC
  • TopologyLow Side
  • Number of Drivers1
  • Mounting TypeSurface Mount
See similar products in Gate Drivers
IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount
  • TWD333.80
    毎管：30 個
IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage1200 V
  • Package TypeTO-268
  • Mounting TypeSurface Mount
  • Pin Count3
See similar products in IGBTs
IXYS CLA30E1200HB, Thyristor 1200V, 30A 50mA
  • TWD131.50
    /個 (每包:2個)
IXYS CLA30E1200HB, Thyristor 1200V, 30A 50mA
  • Rated Average On-State Current30A
  • Thyristor TypeSCR
  • Package TypeTO-247
  • Repetitive Peak Reverse Voltage1200V
  • Surge Current Rating325A
See similar products in Thyristors
N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXYS IXFH26N50P
  • TWD206.10
    毎管：30 個
N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXYS IXFH26N50P
  • Channel TypeN
  • Maximum Continuous Drain Current26 A
  • Maximum Drain Source Voltage500 V
  • Package TypeTO-247
  • SeriesHiperFET, Polar
See similar products in MOSFETs
IXYS 600V 120A, Dual Rectifier Diode, 4-Pin SOT-227B DSEI2X61-06C
  • TWD846.00個
  • Also available in industry standard packaging
IXYS 600V 120A, Dual Rectifier Diode, 4-Pin SOT-227B DSEI2X61-06C
  • Mounting TypePanel Mount
  • Package TypeSOT-227B
  • Maximum Continuous Forward Current120A
  • Peak Reverse Repetitive Voltage600V
  • Diode ConfigurationIsolated
See similar products in Schottky Diodes & Rectifiers
IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 270 A 1700 V, 4-Pin SOT-227B, Surface Mount
  • TWD1,195.10
    毎管：10 個
IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 270 A 1700 V, 4-Pin SOT-227B, Surface Mount
  • Maximum Continuous Collector Current270 A
  • Maximum Collector Emitter Voltage1700 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation680 W
  • Number of Transistors1
See similar products in IGBTs
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