IXYS

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N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXYS IXFH16N50P3
  • TWD125.50
    毎管：30 個
N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXYS IXFH16N50P3
  • Channel TypeN
  • Maximum Continuous Drain Current16 A
  • Maximum Drain Source Voltage500 V
  • Package TypeTO-247
  • SeriesHiperFET, Polar3
See similar products in MOSFETs
IXYS Bridge Rectifier Module, 25A, 1600V, 3-phase, 5-Pin
  • TWD402.50
    個 (以毎盒：50)
IXYS Bridge Rectifier Module, 25A, 1600V, 3-phase, 5-Pin
  • Peak Average Forward Current25A
  • Bridge TypeThree Phase
  • Peak Reverse Repetitive Voltage1600V
  • Mounting TypeScrew Mount
  • Package TypeFO B B
See similar products in Bridge Rectifiers
IXYS 100V 80A, Dual Schottky Diode, 4-Pin SOT-227B DSS2X41-01A
  • TWD642.30
    毎管：10 個
IXYS 100V 80A, Dual Schottky Diode, 4-Pin SOT-227B DSS2X41-01A
  • Mounting TypePanel Mount
  • Package TypeSOT-227B
  • Maximum Continuous Forward Current80A
  • Peak Reverse Repetitive Voltage100V
  • Diode ConfigurationIsolated
See similar products in Schottky Diodes & Rectifiers
IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 80 A 1700 V, 4-Pin SOT-227B, Surface Mount
  • TWD1,342.00個
IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 80 A 1700 V, 4-Pin SOT-227B, Surface Mount
  • Maximum Continuous Collector Current80 A
  • Maximum Collector Emitter Voltage1700 V
  • Maximum Gate Emitter Voltage±20V
  • Number of Transistors1
  • Maximum Power Dissipation680 W
See similar products in IGBTs
IXYS Diode, 2-Pin TO-247AD DSEP30-06A
  • TWD142.30
    毎管：30 個
IXYS Diode, 2-Pin TO-247AD DSEP30-06A
  • Diode ConfigurationSingle
  • Mounting TypeThrough Hole
  • Number of Elements per Chip1
  • Package TypeTO-247AD
  • Diode TechnologySilicon Junction
See similar products in Switching Diodes
IXYS MCC95-12io1B, Dual Thyristor Module 1200V, 116A 150mA
  • TWD1,241.00個
IXYS MCC95-12io1B, Dual Thyristor Module 1200V, 116A 150mA
  • Rated Average On-State Current116A
  • Thyristor TypeSCR Module
  • Package TypeTO-240AA
  • Repetitive Peak Reverse Voltage1200V
  • Surge Current Rating2.4kA
See similar products in Thyristors
IXYS 1200V 10A, Rectifier Diode, 2-Pin TO-220FPAC DHG10I1200PM
  • TWD82.60
    /個 (每包:5個)
  • Also available in industry standard packaging
IXYS 1200V 10A, Rectifier Diode, 2-Pin TO-220FPAC DHG10I1200PM
  • Mounting TypeThrough Hole
  • Package TypeTO-220FPAC
  • Maximum Continuous Forward Current10A
  • Peak Reverse Repetitive Voltage1200V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
  • RS庫存編號
    462-231
  • Brand
    IXYS
  • 製造零件編號
    DHG10I1200PM
N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXYS IXTK120N65X2
  • TWD760.00個
  • Also available in industry standard packaging
N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXYS IXTK120N65X2
  • Channel TypeN
  • Maximum Continuous Drain Current120 A
  • Maximum Drain Source Voltage650 V
  • SeriesX2-Class
  • Package TypeTO-264P
See similar products in MOSFETs
IXYS 1200V 165A, Dual Rectifier Diode, 3-Pin Y4 M6 MDD142-12N1B
  • TWD2,639.70
    個 (以毎盒：6)
IXYS 1200V 165A, Dual Rectifier Diode, 3-Pin Y4 M6 MDD142-12N1B
  • Mounting TypePanel Mount
  • Package TypeY4 M6
  • Maximum Continuous Forward Current165A
  • Peak Reverse Repetitive Voltage1200V
  • Diode ConfigurationSeries
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXYS IXTN200N10L2
  • TWD1,581.00個
N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXYS IXTN200N10L2
  • Channel TypeN
  • Maximum Continuous Drain Current178 A
  • Maximum Drain Source Voltage100 V
  • Package TypeSOT-227
  • SeriesLinear L2
See similar products in MOSFETs
IXYS Bridge Rectifier Module, 63A, 1200V, 3-phase, 5-Pin
  • TWD1,308.00個
IXYS Bridge Rectifier Module, 63A, 1200V, 3-phase, 5-Pin
  • Bridge TypeThree Phase
  • Peak Average Forward Current63A
  • Peak Reverse Repetitive Voltage1200V
  • Mounting TypePanel Mount
  • Package TypePWS D
See similar products in Bridge Rectifiers
  • RS庫存編號
    193-155
  • Brand
    IXYS
  • 製造零件編號
    VUO62-12NO7
N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXYS IXFH60N50P3
  • TWD316.00個
  • Also available in industry standard packaging
N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXYS IXFH60N50P3
  • Channel TypeN
  • Maximum Continuous Drain Current60 A
  • Maximum Drain Source Voltage500 V
  • Package TypeTO-247
  • SeriesHiperFET, Polar3
See similar products in MOSFETs
IXYS Switching Diode, 2-Pin TO-247AD DSEP30-06A
  • TWD158.00個
  • Also available in industry standard packaging
IXYS Switching Diode, 2-Pin TO-247AD DSEP30-06A
  • Diode ConfigurationSingle
  • Number of Elements per Chip1
  • Mounting TypeThrough Hole
  • Package TypeTO-247AD
  • Diode TechnologySilicon Junction
See similar products in Switching Diodes
IXYS CS19-12HO1, Thyristor 1200V, 19A 28mA
  • TWD81.60
    /個 (每包:5個)
  • Also available in industry standard packaging
IXYS CS19-12HO1, Thyristor 1200V, 19A 28mA
  • Rated Average On-State Current19A
  • Thyristor TypeSCR
  • Package TypeTO-220AB
  • Repetitive Peak Reverse Voltage1200V
  • Surge Current Rating180A
See similar products in Thyristors
IXYS IX4427MTR 2 8-Pin, DFN
  • TWD22.10
    個 (在毎卷：2000)
IXYS IX4427MTR 2 8-Pin, DFN
  • Pin Count8
  • Package TypeDFN
  • TopologyLow Side
  • Number of Drivers2
  • Mounting TypeSurface Mount
See similar products in Gate Drivers
IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole
  • TWD147.30
    毎管：50 個
IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole
  • Maximum Continuous Collector Current38 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation165 W
  • Package TypeTO-220
See similar products in IGBTs
IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole
  • TWD400.50
    毎管：30 個
IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole
  • Maximum Continuous Collector Current58 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation195 W
  • Package TypeISOPLUS247
See similar products in IGBTs
N-Channel MOSFET, 62 A, 500 V, 4-Pin SOT-227 IXYS IXTN62N50L
  • TWD2,231.00個
N-Channel MOSFET, 62 A, 500 V, 4-Pin SOT-227 IXYS IXTN62N50L
  • Channel TypeN
  • Maximum Continuous Drain Current62 A
  • Maximum Drain Source Voltage500 V
  • Package TypeSOT-227B
  • SeriesLinear
See similar products in MOSFETs
IXYS MCMA140P1600TA, Dual Thyristor Module 1600V, 140A 200mA
  • TWD1,472.00個
IXYS MCMA140P1600TA, Dual Thyristor Module 1600V, 140A 200mA
  • Rated Average On-State Current140A
  • Thyristor TypeSCR Module
  • Package TypeTO-240
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating2.59kA
See similar products in Thyristors
IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole
  • TWD638.60
    毎管：30 個
IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole
  • Maximum Continuous Collector Current100 A
  • Maximum Collector Emitter Voltage1700 V
  • Maximum Gate Emitter Voltage±20 V, ±30V
  • Number of Transistors1
  • Maximum Power Dissipation937 W
See similar products in IGBTs
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