STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG
- RS庫存編號:
- 215-219
- 製造零件編號:
- SCT012H90G3AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 1000 件）*
TWD1,375,300.00
(不含稅)
TWD1,444,060.00
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 + | TWD1,375.30 | TWD1,375,300.00 |
* 參考價格
- RS庫存編號:
- 215-219
- 製造零件編號:
- SCT012H90G3AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 10.4 mm | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 10.4 mm | ||
Height 4.8mm | ||
Length 15.25mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode