MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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RS庫存編號 103-2965
製造零件編號BSS138LT1G
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N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V - 225 mW Single 1
RS庫存編號 166-1809
製造零件編號FDY3000NZ
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N 600 mA 20 V 700 mΩ SOT-523 (SC-89) Surface Mount 6 -12 V, +12 V Enhancement - 0.6V 625 mW Isolated 2
RS庫存編號 168-6982
製造零件編號STF100N10F7
TWD54.30
毎管:50 個
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N 45 A 100 V 8 mΩ TO-220FP Through Hole 3 -20 V, +20 V Enhancement 4V 2V 30 W Single 1
RS庫存編號 124-1745
製造零件編號BS170
TWD3.60
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N 500 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement 3V 0.8V 830 mW Single 1
RS庫存編號 761-6968
製造零件編號RJK0653DPB-00#J5
TWD33.00
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N 45 A 60 V 6.1 mΩ LFPAK Surface Mount 5 -20 V, +20 V Enhancement 2.5V - 65 W Single 1
RS庫存編號 166-2858
製造零件編號2N7002K
TWD1.90
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N 300 mA 60 V 4.8 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1V 350 mW Single 1
RS庫存編號 780-0478
製造零件編號2N7002KT1G
TWD2.50
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N 380 mA 60 V 2.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.3V - 420 mW Single 1
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製造零件編號2N7002K
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N 300 mA 60 V 4.8 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1V 350 mW Single 1
RS庫存編號 671-0895
製造零件編號FQB44N10TM
TWD53.00
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N 43 A 100 V 39 mΩ D2PAK (TO-263) Surface Mount 3 -25 V, +25 V Enhancement - 2V 3.75 W Single 1
RS庫存編號 791-6286
製造零件編號NTD3055-094T4G
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N 12 A 60 V 94 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement 4V - 48 W Single 1
RS庫存編號 786-3625
製造零件編號STF100N10F7
TWD81.20
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N 45 A 100 V 8 mΩ TO-220FP Through Hole 3 -20 V, +20 V Enhancement 4V 2V 30 W Single 1
RS庫存編號 486-3108
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TWD123.00
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N 14 A 500 V 380 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 150 W Single 1
RS庫存編號 545-0135
製造零件編號BSS123LT1G
TWD6.40
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N 170 mA 100 V 6 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.8V - 225 mW Single 1
RS庫存編號 166-2990
製造零件編號FDPF18N50T
TWD74.90
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N 18 A 500 V 265 mΩ TO-220F Through Hole 3 -30 V, +30 V Enhancement - 3V 38.5 W Single 1
RS庫存編號 145-8751
製造零件編號IPW50R190CEFKSA1
BrandInfineon
TWD60.70
毎管:30 個
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N 18.5 A 550 V 190 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.5V 2.5V 127 W Single 1
RS庫存編號 103-2944
製造零件編號BSS123LT1G
TWD1.20
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N 170 mA 100 V 6 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.8V - 225 mW Single 1
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製造零件編號IRLB3034PBF
BrandInfineon
TWD85.50
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N 343 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.5V 1V 375 W Single 1
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製造零件編號STW14NK50Z
TWD113.50
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N 14 A 500 V 380 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 150 W Single 1
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製造零件編號IRLB3034PBF
BrandInfineon
TWD72.60
毎管:50 個
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N 343 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.5V 1V 375 W Single 1
RS庫存編號 178-0921
製造零件編號IRFD120PBF
BrandVishay
TWD17.70
毎管:100 個
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N 1.3 A 100 V 270 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1