N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

RS庫存編號:: 125-8041
製造零件編號:: IXFN360N10T
製造商:: IXYS

產品概覽和技術數據資料表 (2)

N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

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107 現貨庫存，可於6工作日發貨。

單價（不含稅）個

TWD872.00

(不含稅)

TWD915.60

(含稅)

單位	每單位
1 - 2	TWD872.00
3 - 4	TWD851.00
5 +	TWD837.00

RS庫存編號:: 125-8041
製造零件編號:: IXFN360N10T
製造商:: IXYS

屬性	值
Channel Type	N
Maximum Continuous Drain Current	360 A
Maximum Drain Source Voltage	100 V
Package Type	SOT-227
Series	GigaMOS Trench HiperFET
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	2.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	830 W
Maximum Gate Source Voltage	-20 V, +20 V
Length	38.23mm
Typical Gate Charge @ Vgs	525 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	25.07mm
Height	9.6mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

產品概覽和技術數據資料表 (2)

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series