N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

RS庫存編號:: 168-4577
製造零件編號:: IXFN360N10T
製造商:: IXYS

N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

此圖片僅供參考，請參閲產品詳細資訊及規格

2005 現貨庫存，可於6工作日發貨。

單價（不含稅）毎管：10 個

TWD775.30

(不含稅)

TWD814.06

單位	每單位	Per Tube*
10 - 40	TWD775.30	TWD7,753.00
50 +	TWD697.80	TWD6,978.00

* 參考價格

RS庫存編號:: 168-4577
製造零件編號:: IXFN360N10T
製造商:: IXYS

IXFN360N10T, GigaMOS Trench HiperFET Power MOSFET 100V 360A SOT-227B
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	360 A
Maximum Drain Source Voltage	100 V
Package Type	SOT-227
Series	GigaMOS Trench HiperFET
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	2.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	830 W
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	525 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	38.23mm
Number of Elements per Chip	1
Width	25.07mm
Height	9.6mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series