IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227
- RS庫存編號:
- 168-4577
- 製造零件編號:
- IXFN360N10T
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 10 件）*
TWD7,046.00
(不含稅)
TWD7,398.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,240 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 10 - 40 | TWD704.60 | TWD7,046.00 |
| 50 + | TWD690.50 | TWD6,905.00 |
* 參考價格
- RS庫存編號:
- 168-4577
- 製造零件編號:
- IXFN360N10T
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-227 | |
| Series | GigaMOS Trench HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 525nC | |
| Maximum Power Dissipation Pd | 830W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-227 | ||
Series GigaMOS Trench HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 525nC | ||
Maximum Power Dissipation Pd 830W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
相關連結
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T
- IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227