IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2
- RS庫存編號:
- 125-8042
- Distrelec 貨號:
- 302-53-371
- 製造零件編號:
- IXFN360N15T2
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD1,571.00
(不含稅)
TWD1,649.55
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1 件準備從其他地點送貨
- 加上 77 件從 2026年1月28日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 2 | TWD1,571.00 |
| 3 - 4 | TWD1,534.00 |
| 5 + | TWD1,509.00 |
* 參考價格
- RS庫存編號:
- 125-8042
- Distrelec 貨號:
- 302-53-371
- 製造零件編號:
- IXFN360N15T2
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-227 | |
| Series | GigaMOS TrenchT2 HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 715nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-227 | ||
Series GigaMOS TrenchT2 HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.07kW | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 715nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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