N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXYS IXFN360N15T2

RS庫存編號:: 125-8042
製造零件編號:: IXFN360N15T2
製造商:: IXYS

N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXYS IXFN360N15T2

此圖片僅供參考，請參閲產品詳細資訊及規格

1 現貨庫存，可於6工作日發貨。

單價（不含稅）個

TWD1,603.00

(不含稅)

TWD1,683.15

單位	每單位
1 - 2	TWD1,603.00
3 - 4	TWD1,564.00
5 +	TWD1,539.00

RS庫存編號:: 125-8042
製造零件編號:: IXFN360N15T2
製造商:: IXYS

IXFN360N15T2, GigaMOS TrenchT2 HiperFET Power MOSFET 150V 310A SOT-227B
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	310 A
Maximum Drain Source Voltage	150 V
Package Type	SOT-227
Series	GigaMOS TrenchT2 HiperFET
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	1.07 kW
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	38.23mm
Typical Gate Charge @ Vgs	715 nC @ 10 V
Width	25.07mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	9.6mm

N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXYS IXFN360N15T2

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series