IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

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TWD978.00

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TWD1,026.90

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RS庫存編號:
125-8043
製造零件編號:
IXFN420N10T
製造商:
IXYS
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品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Series

GigaMOS Trench HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

670nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.07kW

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

38.23mm

Width

25.07 mm

Height

9.6mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


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