N-Channel MOSFET, 90 A, 850 V, 4-Pin SOT-227 IXYS IXFN90N85X
- RS庫存編號:
- 146-4386
- 製造零件編號:
- IXFN90N85X
- 製造商:
- IXYS
當前暫無庫存,可於16/01/2025發貨,6 工作日送達。
單價(不含稅) 個
TWD1,661.00
(不含稅)
TWD1,744.05
(含稅)
單位 | 每單位 |
---|---|
1 - 2 | TWD1,661.00 |
3 - 4 | TWD1,618.00 |
5 + | TWD1,593.00 |
- RS庫存編號:
- 146-4386
- 製造零件編號:
- IXFN90N85X
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
屬性 | 值 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 90 A |
Maximum Drain Source Voltage | 850 V |
Package Type | SOT-227 |
Series | HiperFET |
Mounting Type | Screw Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 41 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.5V |
Minimum Gate Threshold Voltage | 3.5V |
Maximum Power Dissipation | 1.2 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Length | 38.23mm |
Maximum Operating Temperature | +150 °C |
Width | 25.07mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 340 @ 10 V nC |
Height | 9.6mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.4V |