製造零件編號

IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X

RS庫存編號:: 146-4249
製造零件編號:: IXFN110N85X
製造商:: IXYS

IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 10 件）*

TWD19,838.00

(不含稅)

TWD20,829.90

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月11日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
10 - 10	TWD1,983.80	TWD19,838.00
20 +	TWD1,924.10	TWD19,241.00

* 參考價格

RS庫存編號:: 146-4249
製造零件編號:: IXFN110N85X
製造商:: IXYS

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	IXYS
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	850V
	Package Type	SOT-227
	Series	HiperFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	1.17kW
	Forward Voltage Vf	1.4V
	Typical Gate Charge Qg @ Vgs	425nC
	Maximum Operating Temperature	150°C
	Length	38.23mm
	Standards/Approvals	No
	Width	25.07 mm
	Height	9.6mm
	Automotive Standard	No

	選取全部
	品牌 IXYS
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 850V
	Package Type SOT-227
	Series HiperFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 1.17kW
	Forward Voltage Vf 1.4V
	Typical Gate Charge Qg @ Vgs 425nC
	Maximum Operating Temperature 150°C
	Length 38.23mm
	Standards/Approvals No
	Width 25.07 mm
	Height 9.6mm
	Automotive Standard No

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X

訂單超過 $1,300.00 免費送貨

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