N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXYS IXFN24N100
- RS庫存編號:
- 146-1694
- 製造零件編號:
- IXFN24N100
- 製造商:
- IXYS
55 現貨庫存，可於6工作日發貨。
單價（不含稅） 毎管：10 個
TWD1,305.80
(不含稅)
TWD1,371.09
(含稅)
單位 | 每單位 | Per Tube* |
|---|---|---|
| 10 - 40 | TWD1,305.80 | TWD13,058.00 |
| 50 + | TWD1,240.50 | TWD12,405.00 |
* 參考價格
- RS庫存編號:
- 146-1694
- 製造零件編號:
- IXFN24N100
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 24 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | SOT-227 |
| Series | HiperFET |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 390 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 568 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 25.42mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 267 nC @ 10 V |
| Length | 38.23mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |