IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 管,共 10 件)*

TWD16,802.00

(不含稅)

TWD17,642.10

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 10 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每管*
10 - 10TWD1,680.20TWD16,802.00
20 - 30TWD1,646.60TWD16,466.00
40 +TWD1,613.70TWD16,137.00

* 參考價格

RS庫存編號:
146-4239
製造零件編號:
IXFN150N65X2
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

145A

Maximum Drain Source Voltage Vds

650V

Series

HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

335nC

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

1.04kW

Maximum Operating Temperature

150°C

Height

9.6mm

Width

25.07 mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

Resonant mode power supplies

High intensity discharge (HID) lamp ballast

AC and DC motor drives

DC-DC converters

Robotic and servo control

Battery chargers

3-level solar inverters

LED lighting

Unmanned Aerial Vehicles (UAVs)

Higher efficiency

High power density

Easy to mount

Space savings

相關連結