N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXYS IXFN110N60P3
- RS庫存編號:
- 804-7596
- 製造零件編號:
- IXFN110N60P3
- 製造商:
- IXYS
當前暫無庫存，可於05/12/2024發貨，6 工作日送達。
單價（不含稅） 個
TWD1,185.00
(不含稅)
TWD1,244.25
(含稅)
單位 | 每單位 |
|---|---|
| 1 - 2 | TWD1,185.00 |
| 3 - 4 | TWD1,157.00 |
| 5 + | TWD1,140.00 |
- RS庫存編號:
- 804-7596
- 製造零件編號:
- IXFN110N60P3
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | SOT-227B |
| Series | HiperFET, Polar3 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 56 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.5 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 25.07mm |
| Typical Gate Charge @ Vgs | 245 nC @ 10 V |
| Length | 38.23mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |