IXYS HiperFET, Polar3 Type N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3

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小計(1 管,共 10 件)*

TWD15,455.00

(不含稅)

TWD16,227.80

(含稅)

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單位
每單位
每管*
10 - 10TWD1,545.50TWD15,455.00
20 - 30TWD1,511.90TWD15,119.00
40 +TWD1,478.30TWD14,783.00

* 參考價格

RS庫存編號:
177-5342
製造零件編號:
IXFN210N30P3
製造商:
IXYS
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品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

192A

Maximum Drain Source Voltage Vds

300V

Series

HiperFET, Polar3

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

14.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.5kW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

268nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

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A wide range of advanced discrete Power MOSFET devices from IXYS

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