N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXYS IXFN140N30P
- RS庫存編號:
- 193-739
- 製造零件編號:
- IXFN140N30P
- 製造商:
- IXYS
可供預購。
單價（不含稅） 個
TWD1,089.00
(不含稅)
TWD1,143.45
(含稅)
單位 | 每單位 |
|---|---|
| 1 - 2 | TWD1,089.00 |
| 3 - 4 | TWD1,062.00 |
| 5 + | TWD1,046.00 |
- RS庫存編號:
- 193-739
- 製造零件編號:
- IXFN140N30P
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 115 A |
| Maximum Drain Source Voltage | 300 V |
| Series | HiperFET, Polar |
| Package Type | SOT-227B |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 24 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 700 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 38.2mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 25.07mm |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |