N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXYS IXFN200N10P

RS庫存編號:: 168-4576
製造零件編號:: IXFN200N10P
製造商:: IXYS

N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXYS IXFN200N10P

此圖片僅供參考，請參閲產品詳細資訊及規格

30 現貨庫存，可於6工作日發貨。

單價（不含稅）毎管：10 個

TWD792.00

(不含稅)

TWD831.60

單位	每單位	Per Tube*
10 - 40	TWD792.00	TWD7,920.00
50 +	TWD712.80	TWD7,128.00

* 參考價格

RS庫存編號:: 168-4576
製造零件編號:: IXFN200N10P
製造商:: IXYS

IXFN 200N10P, Polar HiPerFET Power MOSFET 100V 200A SOT-227B
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	200 A
Maximum Drain Source Voltage	100 V
Series	Polar HiPerFET
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	7.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	680 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	25.07mm
Typical Gate Charge @ Vgs	235 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	38.23mm
Forward Diode Voltage	1.5V
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXYS IXFN200N10P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series