N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

RS庫存編號:: 168-4494
製造零件編號:: IXFN60N80P
製造商:: IXYS

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

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當前暫無庫存，可於27/03/2025發貨，6 工作日送達。

單價（不含稅）毎管：10 個

TWD1,112.30

(不含稅)

TWD1,167.92

單位	每單位	Per Tube*
10 - 40	TWD1,112.30	TWD11,123.00
50 +	TWD1,000.90	TWD10,009.00

* 參考價格

RS庫存編號:: 168-4494
製造零件編號:: IXFN60N80P
製造商:: IXYS

Datasheet
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	53 A
Maximum Drain Source Voltage	800 V
Package Type	SOT-227
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	38.23mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	250 nC @ 10 V
Width	25.42mm
Number of Elements per Chip	1
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series