IXYS HiperFET, Polar Type N-Channel MOSFET, 115 A, 200 V Enhancement, 4-Pin SOT-227 IXFN140N20P

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
可享批量折扣

小計（1 件）*

TWD887.00

(不含稅)

TWD931.35

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看

單位
每單位
1 - 2TWD887.00
3 +TWD860.00

* 參考價格

包裝方式：
RS庫存編號:
193-616
Distrelec 貨號:
302-53-362
製造零件編號:
IXFN140N20P
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

115A

Maximum Drain Source Voltage Vds

200V

Series

HiperFET, Polar

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

680W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

240nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

相關連結