N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P

RS庫存編號:: 193-464
製造零件編號:: IXFN102N30P
製造商:: IXYS

N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P

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當前暫無庫存，可於17/01/2025發貨，6 工作日送達。

單價（不含稅）個

TWD886.00

(不含稅)

TWD930.30

單位	每單位
1 - 2	TWD886.00
3 - 4	TWD864.00
5 +	TWD852.00

RS庫存編號:: 193-464
製造零件編號:: IXFN102N30P
製造商:: IXYS

IXFN 102N30P PolarHV HiPerFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	86 A
Maximum Drain Source Voltage	300 V
Package Type	SOT-227B
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	570 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	38.23mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	224 nC @ 10 V
Width	25.42mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series