N-Channel MOSFET, 61 A, 500 V, 4-Pin SOT-227 IXYS IXFN64N50P
- RS庫存編號:
- 194-568
- 製造零件編號:
- IXFN64N50P
- 製造商:
- IXYS
4 現貨庫存，可於6工作日發貨。
單價（不含稅） 個
TWD944.00
(不含稅)
TWD991.20
(含稅)
單位 | 每單位 |
|---|---|
| 1 - 2 | TWD944.00 |
| 3 - 4 | TWD921.00 |
| 5 + | TWD905.00 |
- RS庫存編號:
- 194-568
- 製造零件編號:
- IXFN64N50P
- 製造商:
- IXYS
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 61 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | SOT-227B |
| Series | HiperFET, Polar |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 85 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 700 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V |
| Width | 25.42mm |
| Transistor Material | Si |
| Length | 38.23mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |