IXYS HiperFET, Polar Type N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50P

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TWD1,150.00

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TWD1,207.50

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3 +TWD1,121.00

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包裝方式：
RS庫存編號:
194-029
Distrelec 貨號:
302-53-378
製造零件編號:
IXFN80N50P
製造商:
IXYS
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品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

500V

Series

HiperFET, Polar

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

195nC

Maximum Power Dissipation Pd

700W

Maximum Operating Temperature

150°C

Height

9.6mm

Standards/Approvals

No

Length

38.2mm

Automotive Standard

No

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