N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

RS庫存編號:: 804-7593
製造零件編號:: IXFN210N30P3
製造商:: IXYS

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

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1 現貨庫存，可於6工作日發貨。

單價（不含稅）個

TWD1,464.00

(不含稅)

TWD1,537.20

單位	每單位
1 - 2	TWD1,464.00
3 - 4	TWD1,428.00
5 +	TWD1,405.00

RS庫存編號:: 804-7593
製造零件編號:: IXFN210N30P3
製造商:: IXYS

IXFN210N30P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	192 A
Maximum Drain Source Voltage	300 V
Package Type	SOT-227B
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	38.23mm
Typical Gate Charge @ Vgs	268 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	25.07mm
Number of Elements per Chip	1
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series