IXYS HiperFET, Polar3 Type N-Channel MOSFET, 66 A, 600 V Enhancement, 4-Pin SOT-227 IXFN80N60P3
- RS庫存編號:
- 168-4759
- 製造零件編號:
- IXFN80N60P3
- 製造商:
- IXYS
可享批量折扣
小計（1 管，共 10 件）*
TWD8,601.00
(不含稅)
TWD9,031.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 220 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 10 - 10 | TWD860.10 | TWD8,601.00 |
| 20 - 30 | TWD841.50 | TWD8,415.00 |
| 40 + | TWD822.80 | TWD8,228.00 |
* 參考價格
- RS庫存編號:
- 168-4759
- 製造零件編號:
- IXFN80N60P3
- 製造商:
- IXYS
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | HiperFET, Polar3 | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Maximum Power Dissipation Pd | 960W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series HiperFET, Polar3 | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Maximum Power Dissipation Pd 960W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
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