N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

RS庫存編號:: 804-7603
製造零件編號:: IXFN80N60P3
製造商:: IXYS

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

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當前暫無庫存，可於27/03/2025發貨，6 工作日送達。

單價（不含稅）個

TWD915.00

(不含稅)

TWD960.75

單位	每單位
1 - 2	TWD915.00
3 - 4	TWD892.00
5 +	TWD880.00

RS庫存編號:: 804-7603
製造零件編號:: IXFN80N60P3
製造商:: IXYS

IXFN80N60P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Fast Intrinsic Rectifie
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	600 V
Package Type	SOT-227B
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	38.23mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	190 nC @ 10 V
Transistor Material	Si
Width	25.07mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series