Vishay Type N-Channel MOSFET, 20 A, 500 V Enhancement, 3-Pin TO-247 IRFP460LCPBF
- RS庫存編號:
- 281-6032
- Distrelec 貨號:
- 171-16-940
- 製造零件編號:
- IRFP460LCPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD280.00
(不含稅)
TWD294.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,875 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 49 | TWD280.00 |
| 50 - 99 | TWD272.00 |
| 100 - 249 | TWD264.00 |
| 250 - 499 | TWD256.00 |
| 500 + | TWD251.00 |
* 參考價格
- RS庫存編號:
- 281-6032
- Distrelec 貨號:
- 171-16-940
- 製造零件編號:
- IRFP460LCPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.27Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 280W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.2mm | |
| Width | 15.29 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 17116940 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.27Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 280W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Length 14.2mm | ||
Width 15.29 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 17116940 | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFETs offer significantly lower gate charges than conventional MOSFETs. These improvements reduce gate drive requirements, speed up switching, and increase system savings, setting a new standard in power transistors for switching applications.
Ultra low gate charge
Reduced gate drive requirement
Isolated central mounting hole
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