Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC
- RS庫存編號:
- 169-5791
- 製造零件編號:
- SIHG20N50E-GE3
- 製造商:
- Vishay
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TWD1,945.00
(不含稅)
TWD2,042.25
(含稅)
訂單超過 $1,300.00 免費送貨
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- 175 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD77.80 | TWD1,945.00 |
| 50 - 75 | TWD76.10 | TWD1,902.50 |
| 100 + | TWD74.50 | TWD1,862.50 |
* 參考價格
- RS庫存編號:
- 169-5791
- 製造零件編號:
- SIHG20N50E-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | E | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series E | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.87mm | ||
Width 5.31mm | ||
Height 20.82mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series E Power MOSFET, 500V Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHG20N50E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial and electrical systems. It operates in enhancement mode and is supplied in a through-hole TO-247 package, making it suitable for assemblies that require robust mounting and straightforward thermal management. The device supports high drain-source voltage and is intended for applications demanding elevated power handling and gate drive capabilities.
Features and Benefits:
• 500V maximum Vds enabling high-voltage switching capability
• 19 A continuous drain current for substantial load handling
• 184 mΩ Rds(on) for reduced conduction losses
• 46 nC typical gate charge allowing predictable drive requirements
• 179W maximum power dissipation for high thermal stress management
• 30V maximum gate-source voltage for wide gate‑drive compatibility
• 19 A continuous drain current for substantial load handling
• 184 mΩ Rds(on) for reduced conduction losses
• 46 nC typical gate charge allowing predictable drive requirements
• 179W maximum power dissipation for high thermal stress management
• 30V maximum gate-source voltage for wide gate‑drive compatibility
Applications
• Suitable for high-voltage DC-DC converters in power systems
• Ideal for industrial motor drive switching stages
• Used with power supplies for telecoms and infrastructure equipment
• Can be used for hard-switching topologies in inverters
• Suitable for laboratory and prototyping through-hole power designs
• Ideal for industrial motor drive switching stages
• Used with power supplies for telecoms and infrastructure equipment
• Can be used for hard-switching topologies in inverters
• Suitable for laboratory and prototyping through-hole power designs
What temperature range can it reliably operate within?
The device is rated for a minimum ambient of -55 °C and a maximum operating temperature of 150 °C, accommodating a wide range of environmental conditions.
How does the package support mounting and heat removal?
The TO-247 through-hole package provides a large tab area for heatsinking and secure PCB or chassis mounting to facilitate thermal management in high-dissipation applications.
What gate‑drive limits should be observed during design?
Gate-source voltage must not exceed 30V to avoid gate oxide stress, and designers should size the driver to handle the typical 46 nC gate charge for controlled switching.
Are there considerations for switching losses with this device?
Designers should account for both the 184 mΩ conduction loss in the on-state and dynamic losses related to the 46 nC gate charge when calculating total switching energy.
相關連結
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