Vishay E Type N-Channel MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247

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TWD1,912.50

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TWD2,008.00

(含稅)

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25 - 25TWD76.50TWD1,912.50
50 - 75TWD74.80TWD1,870.00
100 +TWD73.20TWD1,830.00

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RS庫存編號:
169-5791
製造零件編號:
SIHG20N50E-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

500V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

46nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

20.82mm

Length

15.87mm

Width

5.31 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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