Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3
- RS庫存編號:
- 210-4983
- 製造零件編號:
- SIHG15N80AE-GE3
- 製造商:
- Vishay
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查看批量定價選項小計（1 管，共 25 件）*
TWD2,030.00
(不含稅)
TWD2,131.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 175 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD81.20 | TWD2,030.00 |
| 50 - 75 | TWD79.40 | TWD1,985.00 |
| 100 + | TWD77.60 | TWD1,940.00 |
* 參考價格
- RS庫存編號:
- 210-4983
- 製造零件編號:
- SIHG15N80AE-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.5mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Length | 28.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 15.5mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Length 28.6mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 156W Maximum Power Dissipation - SIHG15N80AE-GE3
This power MOSFET is a high-voltage switching device designed for through-hole mounting in power conversion and industrial control environments. It is an N-channel enhancement type fabricated to handle elevated drain-source potentials while operating across a wide temperature span, making it suitable for demanding thermal and electrical conditions where robust high-voltage switching is required.
Features and Benefits:
• 800V drain-source withstand for high-voltage switching capability
• 13A continuous drain current for sustained load handling
• 304mΩ Rds(on) to reduce conduction losses
• 156W maximum dissipation for higher power throughput
• 35nC typical gate charge for efficient switching control
• 30V gate rating for compatibility with common driver circuits
• 13A continuous drain current for sustained load handling
• 304mΩ Rds(on) to reduce conduction losses
• 156W maximum dissipation for higher power throughput
• 35nC typical gate charge for efficient switching control
• 30V gate rating for compatibility with common driver circuits
Applications
• Suitable for industrial power converters and inverters
• Used for high-voltage motor drive stages
• Ideal for switch-mode power supplies in industrial settings
• Can be used for high-voltage testing and protection circuits
• Suitable for rugged through-hole assembly in control panels
• Used for high-voltage motor drive stages
• Ideal for switch-mode power supplies in industrial settings
• Can be used for high-voltage testing and protection circuits
• Suitable for rugged through-hole assembly in control panels
What temperature range can it reliably operate within?
It is specified to operate from -55°C up to 150°C, suitable for harsh thermal environments.
Which package and mounting method does it use for assembly?
The device is supplied in a TO-247AC package configured for through-hole mounting.
How does its gate characteristic affect switching performance?
With a typical gate charge of 35nC the device requires moderate drive energy, balancing switching speed and driver demands.
What is the forward voltage behaviour to expect during conduction?
The forward voltage is specified at 1.2V which indicates its conduction drop in forward-biased conditions.
相關連結
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