Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC
- RS庫存編號:
- 188-4876
- 製造零件編號:
- SIHG21N80AE-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 管，共 25 件）*
TWD2,540.00
(不含稅)
TWD2,667.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 25 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD101.60 | TWD2,540.00 |
| 50 - 75 | TWD99.40 | TWD2,485.00 |
| 100 + | TWD97.10 | TWD2,427.50 |
* 參考價格
- RS庫存編號:
- 188-4876
- 製造零件編號:
- SIHG21N80AE-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 235mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Width | 5.31mm | |
| Length | 15.87mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 235mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Width 5.31mm | ||
Length 15.87mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 17.4A Drain Current - SIHG21N80AE-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion tasks in industrial environments. It operates across a wide temperature range, supports substantial continuous current, and is supplied in a through-hole TO-247AC package suitable for applications requiring robust mounting and straightforward thermal interfacing.
Features and Benefits:
• 800V blocking capability enabling high-voltage system design • 17.4 A continuous drain current for substantial load handling • 235 mΩ Rds(on) to reduce conduction losses under load • 48 nC typical gate charge for predictable switching performance • 179W power dissipation capacity for demanding power stages • Rated to 150 °C for elevated-temperature operation
Applications
• Suitable for industrial motor-drive inverter stages • Ideal for high-voltage power supplies and converters • Used for renewable-energy inverter and PV optimiser designs • Can be used for traction and utility power electronics • Suitable for hard-switched and soft-switched semiconductor stages
What mounting considerations apply for thermal management?
The through-hole TO-247AC format enables direct bolting to heatsinks and effective use of insulating pads or thermal compound to transfer dissipated power to external cooling.
How does the gate-source voltage rating affect gate-drive design?
With a maximum gate-source allowance of 30 V, gate drivers should be selected to operate within this window and provide sufficient drive to achieve the specified gate charge without exceeding the voltage limit.
What environmental extremes can it tolerate during operation?
The device is specified to function down to -55 °C and up to 150 °C, permitting use in installations with wide ambient and junction temperature excursions.
Which electrical parameter dictates switching-energy considerations?
The typical gate charge of 48 nC combined with the device’s on-resistance and voltage rating primarily determines energy losses during turn-on and turn-off events.
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