Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3
- RS庫存編號:
- 735-129
- 製造零件編號:
- SIHB21N80AE-T5-GE3
- 製造商:
- Vishay
N
可享批量折扣
小計（1 組，共 1 件）*
TWD139.00
(不含稅)
TWD145.95
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月31日 發貨
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|---|---|
| 1 - 9 | TWD139.00 |
| 10 - 49 | TWD86.00 |
| 50 - 99 | TWD67.00 |
| 100 + | TWD45.00 |
* 參考價格
- RS庫存編號:
- 735-129
- 製造零件編號:
- SIHB21N80AE-T5-GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SIHB21N80AE | |
| Package Type | TO-263 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.205Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.355mm | |
| Standards/Approvals | RoHS | |
| Length | 0.42mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SIHB21N80AE | ||
Package Type TO-263 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.205Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Width 0.355mm | ||
Standards/Approvals RoHS | ||
Length 0.42mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET offers high efficiency and robust performance in power supplies, suitable for demanding applications in server and telecom environments. It is designed to optimise energy management and minimise losses.
Low effective capacitance contributing to Faster response times
Single configuration streamlines design and integration
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