Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3
- RS庫存編號:
- 210-4991
- 製造零件編號:
- SIHP15N80AE-GE3
- 製造商:
- Vishay
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查看批量定價選項小計（1 管，共 50 件）*
TWD3,060.00
(不含稅)
TWD3,213.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 850 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD61.20 | TWD3,060.00 |
| 100 - 450 | TWD59.90 | TWD2,995.00 |
| 500 + | TWD58.80 | TWD2,940.00 |
* 參考價格
- RS庫存編號:
- 210-4991
- 製造零件編號:
- SIHP15N80AE-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.96mm | |
| Length | 27.69mm | |
| Standards/Approvals | RoHS | |
| Height | 4.24mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 9.96mm | ||
Length 27.69mm | ||
Standards/Approvals RoHS | ||
Height 4.24mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHP15N80AE-GE3
This power MOSFET is a high-voltage N-channel switching device designed for through-hole mounting in power conversion and control circuits. It operates across a wide temperature span and is intended for applications requiring elevated voltage withstand, moderate continuous current capability and gate-driven enhancement-mode switching. The device is supplied in a TO-220AB package with three pins for conventional board or heatsink installation.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching
• 13A continuous drain current supports sustained load delivery
• 304mΩ Rds(on) minimises conduction losses at switching
• 156W power dissipation allows significant thermal handling
• 53nC total gate charge keeps gate-drive requirements predictable
• 30V gate-source tolerance permits robust drive voltage margins
• 13A continuous drain current supports sustained load delivery
• 304mΩ Rds(on) minimises conduction losses at switching
• 156W power dissipation allows significant thermal handling
• 53nC total gate charge keeps gate-drive requirements predictable
• 30V gate-source tolerance permits robust drive voltage margins
Applications
• Suitable for high-voltage power supplies and converters
• Used for snubber and clamp circuits in industrial inverters
• Ideal for switched-mode power stages in lighting controls
• Can be used for motor drive front ends with through-hole mounting
• Used with laboratory test rigs requiring elevated voltage handling
• Used for snubber and clamp circuits in industrial inverters
• Ideal for switched-mode power stages in lighting controls
• Can be used for motor drive front ends with through-hole mounting
• Used with laboratory test rigs requiring elevated voltage handling
What ambient range can it tolerate in demanding installations?
It is specified to operate from -55°C up to 150°C, allowing use in both cold and high-temperature environments.
How is the component mounted for effective heat dissipation?
The TO-220AB package is designed for through-hole attachment and can be mounted to a heatsink for improved thermal performance.
What type of channel and conduction mode does it employ?
The device is an N-channel enhancement-mode MOSFET, requiring a positive gate drive to conduct.
Which electrical characteristic determines switching voltage drop?
The forward voltage parameter of 1.2V is indicative of the device’s conduction voltage behaviour during forward current flow.
相關連結
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