Vishay E Type N-Channel Power MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB
- RS庫存編號:
- 228-2874
- 製造零件編號:
- SiHP080N60E-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD4,710.00
(不含稅)
TWD4,945.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 650 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD94.20 | TWD4,710.00 |
| 100 - 450 | TWD91.40 | TWD4,570.00 |
| 500 - 950 | TWD88.60 | TWD4,430.00 |
| 1000 - 1950 | TWD86.00 | TWD4,300.00 |
| 2000 + | TWD83.40 | TWD4,170.00 |
* 參考價格
- RS庫存編號:
- 228-2874
- 製造零件編號:
- SiHP080N60E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 227W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 227W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 35A Maximum Continuous Drain Current - SiHP080N60E-GE3
This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial and electronic systems. It operates as an enhancement-mode transistor in a through-hole TO-220 package, allowing robust mounting and heat-sinking for demanding applications. The device is suited to circuits requiring high drain-source voltage handling and significant continuous current capability.
Features and Benefits:
• 650V rating enables handling of high-voltage power rails • 35A continuous drain current supports substantial load currents • 80mΩ Rds(on) minimises conduction losses during switching • 42nC typical gate charge reduces driver energy requirements • 227W power dissipation permits sustained thermal loading • 150°C maximum junction temperature allows high-temperature operation
Applications
• Suitable for high-voltage DC-DC converters in industrial power supplies • Ideal for motor-drive front-ends requiring robust switching elements • Used for inverter stages in medium-power renewable systems • Can be used for power-factor-correction stages in commercial equipment • Used with discrete switching designs needing through-hole mounting
What gate-drive considerations should I allow for?
Expect a typical gate charge of 42nC at the specified gate drive, so select a driver capable of sourcing and sinking the required Peak current to meet switching-speed targets.
How should thermal management be applied in a design?
Use a suitable heatsink attached to the TO-220 tab and account for the 227W power dissipation rating under defined thermal conditions to maintain junction temperature below its 150°C limit.
What polarity and mounting constraints exist for PCB integration?
The device is an N-channel enhancement device with three pins in a through-hole TO-220 arrangement, enabling secure mechanical attachment and straightforward thermal coupling to a chassis or heatsink.
Are there limits for gate voltage during operation?
The maximum permissible gate-source voltage is 30V, so gate-drive circuits must be designed to remain within this threshold to avoid device stress.
相關連結
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHA690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3