製造零件編號

Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220

RS庫存編號:: 228-2874
製造零件編號:: SiHP080N60E-GE3
製造商:: Vishay

Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD4,205.00

(不含稅)

TWD4,415.00

訂單超過 $1,300.00 免費送貨

有庫存

700 件準備從其他地點送貨

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單位	每單位	每管*
50 - 50	TWD84.10	TWD4,205.00
100 - 450	TWD81.60	TWD4,080.00
500 - 950	TWD79.10	TWD3,955.00
1000 - 1950	TWD76.80	TWD3,840.00
2000 +	TWD74.50	TWD3,725.00

* 參考價格

RS庫存編號:: 228-2874
製造零件編號:: SiHP080N60E-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	227W
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 227W
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiHP080N60E-GE3

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220

訂單超過 $1,300.00 免費送貨

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