Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- RS庫存編號:
- 210-4985
- 製造零件編號:
- SIHG17N80AE-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 管，共 25 件）*
TWD2,110.00
(不含稅)
TWD2,215.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,475 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD84.40 | TWD2,110.00 |
| 50 - 75 | TWD82.60 | TWD2,065.00 |
| 100 + | TWD80.60 | TWD2,015.00 |
* 參考價格
- RS庫存編號:
- 210-4985
- 製造零件編號:
- SIHG17N80AE-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 15.66mm | |
| Height | 4.83mm | |
| Length | 35.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 15.66mm | ||
Height 4.83mm | ||
Length 35.3mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHG17N80AE-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion environments. It operates as an enhancement-mode N-channel device and is intended for through-hole mounting in applications requiring robust high-voltage handling and significant continuous current capability. The component meets RoHS requirements and functions across a wide ambient temperature range.
Features and Benefits:
• 800V drain-source rating enables high-voltage system operation
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment
What temperature range can it tolerate during operation?
It is specified to function from -55°C up to 150°C, enabling use in both cold-start and elevated-heat environments.
Which package type and mounting style does it use?
The device is supplied in a TO-247AC package and is designed for through-hole PCB mounting for secure mechanical and thermal connection.
How does the forward voltage affect conduction?
The forward voltage of 1.2V indicates the on-state voltage drop under conduction conditions, which factors into thermal design and power-loss calculations.
Is it suitable for automotive qualification testing?
It is not designated as automotive standard
suitability for vehicle use should be evaluated against the required automotive specifications.
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