Vishay E Series N channel-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247AC SIHG100N65E-GE3
- RS庫存編號:
- 735-208
- 製造零件編號:
- SIHG100N65E-GE3
- 製造商:
- Vishay
N
可享批量折扣
小計（1 件）*
TWD218.00
(不含稅)
TWD228.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月26日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD218.00 |
| 10 - 49 | TWD135.00 |
| 50 - 99 | TWD105.00 |
| 100 + | TWD71.00 |
* 參考價格
- RS庫存編號:
- 735-208
- 製造零件編號:
- SIHG100N65E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E Series | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.87 mm | |
| Length | 20.82mm | |
| Height | 5.31mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E Series | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 15.87 mm | ||
Length 20.82mm | ||
Height 5.31mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
相關連結
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG026N65E-GE3
- Vishay Single E Type N-Channel MOSFET 650 V TO-247AC SIHG47N65E-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG080N65SF-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG110N65SF-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG041N65SF-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG050N65SF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3