Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC SIHG47N65E-GE3

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包裝方式:
RS庫存編號:
180-7734
製造零件編號:
SIHG47N65E-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-247AC

Maximum Drain Source Resistance Rds

0.072Ω

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

273nC

Maximum Power Dissipation Pd

417W

Forward Voltage Vf

1.2V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel TO-247AC-3 MOSFET is a new age product with a drain-source voltage of 650V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 72mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 417W and continuous drain current of 47A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

Applications


• Battery chargers

• Fluorescent ballast lighting

• High-intensity discharge (HID)

• Motor drives

• Power factor correction power supplies (PFC)

• Renewable energy

• Server and telecom power supplies

• Solar PV inverters

• Switch mode power supplies (SMPS)

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested

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