Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC
- RS庫存編號:
- 180-7345
- 製造零件編號:
- SIHG47N65E-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 25 件)*
TWD3,755.00
(不含稅)
TWD3,942.75
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 25 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD150.20 | TWD3,755.00 |
| 50 - 75 | TWD147.00 | TWD3,675.00 |
| 100 + | TWD143.60 | TWD3,590.00 |
* 參考價格
- RS庫存編號:
- 180-7345
- 製造零件編號:
- SIHG47N65E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | E | |
| Maximum Drain Source Resistance Rds | 0.072Ω | |
| Maximum Power Dissipation Pd | 417W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 273nC | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series E | ||
Maximum Drain Source Resistance Rds 0.072Ω | ||
Maximum Power Dissipation Pd 417W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 273nC | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel TO-247AC-3 MOSFET is a new age product with a drain-source voltage of 650V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 72mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 417W and continuous drain current of 47A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
Applications
• Battery chargers
• Fluorescent ballast lighting
• High-intensity discharge (HID)
• Motor drives
• Power factor correction power supplies (PFC)
• Renewable energy
• Server and telecom power supplies
• Solar PV inverters
• Switch mode power supplies (SMPS)
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested
相關連結
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