Vishay SIHG Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC
- RS庫存編號:
- 268-8296
- 製造零件編號:
- SIHG085N60EF-GE3
- 製造商:
- Vishay
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查看批量定價選項小計（1 管，共 25 件）*
TWD3,585.00
(不含稅)
TWD3,764.25
(含稅)
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單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 75 | TWD143.40 | TWD3,585.00 |
| 100 - 475 | TWD140.50 | TWD3,512.50 |
| 500 + | TWD137.70 | TWD3,442.50 |
* 參考價格
- RS庫存編號:
- 268-8296
- 製造零件編號:
- SIHG085N60EF-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 184W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 184W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay EF series power MOSFET with fast body diode which has reduced switching and conduction losses, and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
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