Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3

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包裝方式:
RS庫存編號:
268-8299
製造零件編號:
SIHG150N60E-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247AC

Series

SIHG

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.158Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

15.7mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay SIHG Series MOSFET, 650V Drain-Source Voltage, 22A Continuous Drain Current - SIHG150N60E-GE3


This N-channel MOSFET is designed to switch and control high-voltage power in industrial electronics and automation equipment. It operates as an enhancement-mode transistor for use in discrete power stages where high blocking voltage and significant current capacity are required. The device is supplied in a through-hole TO-247AC package suited to conventional assembly and heat-sinking arrangements.

Features and Benefits:


• 650V drain rating enables high-voltage switching applications • 22A continuous current supports substantial load handling • 0.158Ω low Rds(on) reduces conduction losses • 179W power dissipation allows robust thermal throughput • 36nC typical gate charge for predictable switching behaviour • 30V gate tolerance accommodates common drive voltages

Applications


• Suitable for high-voltage DC-DC converters in industrial systems • Ideal for switch-mode power supplies in manufacturing equipment • Used for motor drive stages requiring high-voltage switching • Can be used for line-side power conversion in automation racks • Used for laboratory power electronics development and testing

What temperature range can it operate within?


The device functions across a wide ambient span from -55°C up to a maximum junction limit of 150°C for demanding thermal environments.

How is it best mounted for heat management?


The through-hole TO-247AC format permits direct attachment to heatsinks using the package tab and standard mounting hardware to improve thermal transfer.

What gate drive considerations should be observed?


The gate should be driven within ±30V absolute limits and switching waveforms should account for the typical 36nC gate charge to manage transition losses and driver sizing.

What pin configuration is provided?


It is a three-pin transistor layout compatible with common power PCB footprints and through-hole assembly processes.

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