Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3

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RS庫存編號:
279-9911
製造零件編號:
SIHG155N60EF-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Series

SIHG

Package Type

TO-247AC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

38nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

15.7mm

Automotive Standard

No

Vishay SIHG Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHG155N60EF-GE3


This n-channel MOSFET is a high-voltage switching transistor designed for power conversion and control tasks in industrial and electronic systems. It is intended for use in through-hole mounting on power assemblies where robust avalanche and thermal handling are required. The device operates across a wide temperature span and is suitable for applications demanding substantial power throughput and gate-drive flexibility.

Features and Benefits:


• 600V drain rating enables high-voltage switching applications • 21A continuous drain current supports sustained load operation • 0.159Ω Rds(on) reduces conduction losses during on-state • 179W power dissipation allows higher thermal loading capacity • 38nC gate charge facilitates predictable switching behaviour • 30V gate tolerance permits generous drive margin for gate circuits

Applications


• Suitable for high-voltage DC-DC converters in power supplies • Ideal for industrial motor drive switching stages • Used for switch-mode power supplies in automation equipment • Can be used for valve or solenoid drive circuits requiring through-hole components • Used with discrete power stages in laboratory and test rigs

What mounting considerations are needed for heat management?


Use a suitably rated heatsink attached to the package mounting face and ensure airflow or thermal Interface material to maintain junction temperatures within safe limits.

How does the device behave under elevated ambient temperatures?


It is specified for operation across a wide temperature range and will require derating of allowable current and power dissipation as junction temperature approaches its maximum rated limit.

What gate-drive arrangement is appropriate for fast switching?


A gate driver capable of sourcing and sinking currents to achieve the specified gate charge transition times is recommended, while respecting the 30V gate-source limit.

Are there considerations for switching losses at high frequency?


Switching losses scale with frequency and gate-charge-induced transition energy, so minimise transition durations and manage thermal dissipation when operating at elevated switching rates.

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